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High performance GaN-based flip-chip LEDs with different electrode patterns.

Authors
  • Horng, Ray-Hua
  • Chuang, Shih-Hao
  • Tien, Ching-Ho
  • Lin, Sin-Cyuan
  • Wuu, Dong-Sing
Type
Published Article
Journal
Optics Express
Publisher
The Optical Society
Publication Date
May 05, 2014
Volume
22 Suppl 3
Identifiers
DOI: 10.1364/OE.22.00A941
PMID: 24922399
Source
Medline
License
Unknown

Abstract

A high-performance flip-chip light-emitting diode (FCLED) with a Ni/Ag metallic film as high reflectivity mirror (92.67%) of p-type electrode was successfully fabricated. The effect of geometric electrode patterns on the blue InGaN/GaN LEDs was investigated and analyzed qualitatively its current spreading in the active region. With different electrode patterns, these devices were experimented and simulated by simple electrical circuits in order to confirm its current-voltage characteristics and light emission pattern. It was found that the forward voltages of these FCLEDs were about 3.6 V (@350 mA). The light output power of FCLEDs with circle-round type electrode was 368 mW at an injection current of 700 mA. From these optoelectronic measurement and thermal infrared images, we proposed some design methodologies for improved current spreading, light output power, droop efficiency and thermal performance.

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