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A high performance electroformed single-crystallite VO2 threshold switch.

Authors
  • Zhou, Xin1
  • Gu, Deen1
  • Li, Yatao1
  • Qin, Haoxin1
  • Jiang, Yadong1
  • Xu, Jimmy2
  • 1 School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China. [email protected] [email protected] , (China)
  • 2 School of Engineering, Brown University, 184 Hope Street, Providence, Rhode Island 02912, USA.
Type
Published Article
Journal
Nanoscale
Publisher
The Royal Society of Chemistry
Publication Date
Dec 07, 2019
Volume
11
Issue
45
Pages
22070–22078
Identifiers
DOI: 10.1039/c9nr08364b
PMID: 31720651
Source
Medline
Language
English
License
Unknown

Abstract

Threshold switches (TSs) are an effective approach for resolving the sneak path problem within a memristor array. VO2 is a promising material for fabricating high-performance TSs. Here we report a single crystal VO2-based TS device with high switching performance. The single crystal monoclinic VO2 channel is obtained by electroforming in a composite vanadium oxide film consisting of VO2, V2O5 and V3O7. The formation mechanism on single crystal VO2 is thoroughly investigated by means of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystal VO2-based TS device exhibits better switching performance than the polycrystalline monoclinic VO2 counterpart. The TS device based on a single crystal channel with the (2[combining macron]11) orientation exhibits a steep turn-on voltage slope of <0.5 mV dec-1, a fast switching speed of 23 ns, an excellent endurance over 109 cycles, a high Ion/Ioff ratio of 143 and a low sample-to-sample variance. The enhanced switching performance originates from the single crystal feature and specified crystal orientation.

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