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High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method

Authors
  • xy, ma
  • cao, q
  • wang, st
  • guo, l
  • wang, zm
  • wang, lm
  • gp, he
  • yang, yl
  • zhang, hq
  • zhou, xn
  • chen, lh
  • acad, ma xy r chinese
Publication Date
Jan 01, 1998
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

High performance uncooled 1.55 mu m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were reported in this paper. Whole MOCVD over growth method were applied in this work. The threshold currents of 5mA and the highest lasing temperature of 122 degrees C were obtained.

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