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High-mobility Ga-polarity GaN achieved by NH3-MBE

Authors
  • wang, jx
  • wang, xl
  • sun, dz
  • jm, li
  • zeng, yp
  • gx, hu
  • liu, hx
  • lin, ly
  • chinese, jx r wang
Publication Date
Jan 01, 2003
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

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