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High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Authors
Type
Published Article
Journal
Science (New York, N.Y.)
Publication Date
Volume
267
Issue
5194
Pages
51–55
Identifiers
PMID: 17840057
Source
Medline

Abstract

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

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