Heteroepitaxy of cubic GaN: influence of interface structure
- Authors
-
- trampert, a
- brandt, o
- yang, h
- yang, b
- ploog, kh
- a paul, 5-7 trampert
- Publication Date
- Jan 01, 1997
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Molecular-Beam Epitaxy
- Gan/Gaas(001)
- Growth
- 半导体物理
- Atomic Layer Deposition
- Development
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- 展开
- Growth
- Ontogeny
- Alloy Development
- 增长性
- Animal Growth
- Hypertrophy
- Maturing
- Growth Rate (Animals)
- License
- Unknown
- External links
Abstract
We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.
