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Heteroepitaxy of cubic GaN: influence of interface structure

Authors
  • trampert, a
  • brandt, o
  • yang, h
  • yang, b
  • ploog, kh
Publication Date
Jan 01, 1997
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.

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