Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
- Authors
- Publication Date
- Jan 01, 2004
- Source
- Knowledge Repository of SEMI,CAS
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- Unknown
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Abstract
Quality ZnO films were successfully grown on Si(100) substrate by low-pressure metal organic chemical vapor deposition method in temperature range of 300-500 degrees C using DEZn and N2O as precursor and oxygen source respectively. The crystal structure, optical properties and surface morphology of ZnO films were characterized by X-ray diffraction, optical refection and atomic force microscopy technologies. It was demonstrated that the crystalline structure and surface morphology of ZnO films strongly depend on the growth temperature.
