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GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Authors
  • wang, xl
  • sun, dz
  • kong, my
  • hou, x
  • zeng, yp
  • chinese, xl r wang
Publication Date
Jan 01, 1996
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than similar to 60 Angstrom, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Angstrom, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

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