GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N configuration
- Authors
-
- wang, xl
- sun, dz
- kong, my
- hou, x
- zeng, yp
- chinese, xl r wang
- Publication Date
- Jan 01, 1997
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- 半导体材料
- Quantum Wells
- Molecular Beam Epitaxy
- Ingaas/Inp
- Optical Properties
- Quantum-Well Structures
- Molecular-Beam Epitaxy
- Room-Temperature
- Modulation
- Excitons
- Lasers
- Shift
- Atomic Layer Deposition
- Adaptive Modulation
- Excitons
- Shift
- Lasers
- Optical Properties
- Atomic Layer Deposition
- Quantum Wells
- Room Temperature
- London And South Eastern Library Region, Uk
- 布居反转
- Natural Lasers
- Fabry-Perot Lasers
- Lasers (Francais)
- Laser
- Quantum Generators (Optical)
- Optical Quantum Generators
- Irasers
- Laser Tuning
- Dfb Lasers
- Distributed Feedback Lasers
- Dbr Lasers
- Distributed Bragg Reflector Lasers
- Pulsed Lasers
- Population Inversion
- Optical Masers
- Masers, Optical
- Light Amplification By Stimulated Emission Of Radiation
- Trions
- Exciton-Phonon Interactions
- Phonon-Exciton Interactions
- Carrier Modulation
- Dpcm (Modulation)
- Modulation/Demodulation
- Dpcm
- Differential Pulse Code Modulation
- Adpcm
- Adaptive Differential Pulse Code Modulation
- Adaptive Delta Modulation
- Modulation
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Molecular Beam Epitaxial Growth
- Omvpe
- Omcvd
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Optical Props
- Proprietes Optiques
- Apcvd
- Chemical Vapour Deposition
- Ommbe
- Mombe
- Metalorganic Molecular Beam Epitaxy
- Gsmbe
- Apcvd
- Optische Eigen Schaften
- Optical Constants
- Many-Body Expansion
- Coulomb-Bethe
- Molecular Beam Epitaxy
- Ald
- Cvi (Fabrication)
- Vpe
- Vapor Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapour Phase Epitaxial Growth
- Migration-Enhanced Epitaxy
- Mbe
- Molecular Beam Epitaxial Growth
- Omvpe
- Omcvd
- Movpe
- Metalorganic Chemical Vapour Deposition
- Mocvd
- Laser Deposition
- Crystal Growth From Vapour
- Cvi
- Chemical Vapor Infiltration
- Chemical Vapour Infiltration
- Lpcvd
- Laser-Induced Cvd
- Laser Cvd
- Cvd
- Chemical Vapor Deposition
- Gas Source Mbe
- Cbe
- Chemical Beam Epitaxial Growth
- Molecular Layer Epitaxial Growth
- Mle Growth
- Ale
- Atomic Layer Epitaxial Growth
- Multiple Quantum Well Structures
- Wells, Quantum
- 粒子数布居反转
- License
- Unknown
- External links
Abstract
InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Angstrom in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.
