Growth of ZnO single crystal by chemical vapor transport method
- Authors
-
- zhou, jm
- dong, zy
- wei, xc
- duan, ml
- jm, li
- Publication Date
- Jan 01, 2006
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Zinc Oxide
- Chemical Vapor Transport
- Single Crystal Growth
- Hydrothermal Method
- Bulk Zno
- Impurities
- Devices
- 半导体材料
- Zinc Oxide
- Hydrothermal Method
- Crystal Impurities
- Heraldry
- 锌白
- Chinese White
- Zinc White
- Oxyde De Zinc
- Zinkoxid
- 晶体生长水热法
- Impurities
- Doping Profiles
- Impurity Distribution
- Impurity Clustering
- Impurity Segregation
- Impurity-Dislocation Interactions
- Dislocation-Impurity Interactions
- Impurity-Vacancy Interactions
- Vacancy-Impurity Interactions
- Schottky Defects
- Vacancies (Crystal)
- Divacancies
- Contaminants
- Impuretes
- Verunreinigungen
- Pedigrees
- Blazonry
- Arms, Coats Of
- Coats Of Arms
- Devices (Heraldry)
- Devices
- Heraldic Devices
- License
- Unknown
- External links
Abstract
ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.
