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The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

  • h. p.), hp song (song
  • g. l.), gl zheng (zheng
  • a. l.), yang al (yang
  • y.), y guo (guo
  • h. y.), hy wei (wei
  • m.), li cm (li c.
  • s. y.), sy yang (yang
  • x. l.), xl liu (liu
  • q. s.), qs zhu (zhu
  • z. g.), zg wang (wang
Publication Date
Jan 01, 2010
Knowledge Repository of SEMI,CAS
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Both In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite (w-)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w-ZnO(101) parallel to bcc-In2O3(111). We have measured the valence band offset (VBO) of w-ZnO(101)/bcc-In2O3(111) heterojunction to settle the question of the band line-up of the ZnO/In2O3 heterojunction. Our result shows that the valence band maximum (VBM) of ZnO(101) lies similar to 0.49 eV below the VBM of bcc-In2O3(111), and the conduction band maximum (CBM) of w-ZnO(101) is about 0.05 eV lower than the CBM of bcc-In2O3 (111), which shows that their CBMs are nearly at the same level.

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