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Growth of thicker zinc-blende CrSb layers by using (In,Ga)As buffer layers

Authors
  • deng, jj
  • zhao, jh
  • jf, bi
  • niu, zc
  • yang, fh
  • xg, wu
  • zheng, hz
Publication Date
Jan 01, 2006
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Zinc-blende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. Compared with the typical thickness [2-3 ML (ML denotes monolayers)] of zb-CrSb grown directly on GaAs, the thickness of zb-CrSb grown on (In,Ga)As has been increased largely; the maximum can be up to similar to 9 ML. High-resolution cross sectional transmission electron microscopy images show that the zb-CrSb layer is combined with (In,Ga)As buffer layer without any dislocations at the interface. (C) 2006 American Institute of Physics.

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