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Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

Authors
  • gao, f
  • gh, li
  • zhang, jh
  • qin, fg
  • yao, zy
  • liu, zk
  • wang, zg
  • lin, ly
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

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