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Growth of Ge nanowires on Ge/Si templates with indium catalyst via metal organic chemical vapor deposition

Authors
  • Park, Jinsub1
  • Kim, Kihyun2
  • 1 Hanyang University, Department of Electronic Engineering, Seoul, 133-791, Korea , Seoul (South Korea)
  • 2 Japan Fine Ceramics Center, Nanostructures Research Laboratory, 2-4-1 Mutsuno, Atsuta-ku, Nagoya, 456-8587, Japan , Nagoya (Japan)
Type
Published Article
Journal
Electronic Materials Letters
Publisher
The Korean Institute of Metals and Materials
Publication Date
Dec 15, 2012
Volume
8
Issue
6
Pages
545–548
Identifiers
DOI: 10.1007/s13391-012-2080-4
Source
Springer Nature
Keywords
License
Yellow

Abstract

We report on the growth of Ge nanowires on a (111) Si substrate using pre-deposited Ge thin films and indium metal catalyst via metal organic chemical vapor deposition. The indium metal was continuously supplied by a trimethylindium (TMIn) source flow. Transmission electron microscopy and energy disperse spectroscopy results revealed that Ge nanowires grew on the indium droplet/Si substrate and that In metal droplets acted as a catalyst for the growth of Ge nanowires. The possible growth mechanism of Ge nanowires may be supplemented by Ge atoms from a reservoir formed by the eutectic alloy formation due to the reaction of In and Ge.

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