GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE
- Authors
- Publication Date
- Jan 01, 1992
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
- License
- Unknown
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Abstract
GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface.
