Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
- Authors
-
- pan, z
- lh, li
- zhang, w
- wang, xu
- lin, yw
- rh, wu
- Publication Date
- Jan 01, 2001
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Adsorption
- Characterization
- Radiation
- Molecular Beam Epitaxy
- Nitrides
- Surface-Emitting Laser
- Quantum-Wells
- Operation
- Range
- 半导体材料
- Adsorption
- Characterization
- Radiation
- Atomic Layer Deposition
- Nitrides
- Quantum Wells
- Operation
- Rangelands
- Range Of Data
- 吸附
- Sorption
- Absorption
- Chemisorption
- Physisorption
- Accommodation Coefficient
- Gas-Surface Interactions
- Adsorption (Deutsch)
- Adsorption (Francais)
- Cryosorption
- Adsorbents
- Absorption (Chemistry)
- 吸附作用
- Electromagnetic Radiation
- Irradiation
- Gamma Radiation
- Radiation (Francais)
- Strahlung
- Radiant Energy
- Radiation Emission
- Ionizing Radiation
- Gamma-Radiation
- Gamma Rays
- Alpha Radiation
- Beta Radiation
- Radiation (Gamma)
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Chemical Vapor Deposition
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- Nitride
- Nitrures
- Wells, Quantum
- Multiple Quantum Well Structures
- 运算
- Range Lands
- Ranges, Livestock
- Stock-Ranges
- Range
- Rangeland
- Grazing Lands
- Pasture
- 量程
- Range Of A Function
- Stratigraphic Range
- 极差
- License
- Unknown
- External links
Abstract
We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate. It was almost independent of T, over the range of 400-500 degreesC, but dropped rapidly when T-g exceeded 500 degreesC. Thermally-activated N surface segregation is considered to account for the strong falloff of the N concentration. As increasing N concentration, the steep absorption edge of the photovoltage spectra of GaInNAs/GaAs QW became gentle, the full-width at half-maximum of the photoluminescence (PL) peal; increased rapidly, and a so-called S-shaped temperature dependence of PL peak energy showed up. All these were attributed to the increasing localized state as N concentration. Ion-induced damage was one of the origins of the localized state. A rapid thermal annealing procedure could effectively remote the localized state. (C) 2001 Elsevier Science D.V. All rights reserved.
