Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition Authors wei, m wang, xl xiao, hl wang, cm pan, x hou, qf wang, zg Publication Date Jan 01, 2011 Source Knowledge Repository of SEMI,CAS Keywords Electron-Mobility Transistors Al-Content Stress-Control Phase Epitaxy Algan Buffer Layers Heterostructures Interlayers Silicon 半导体材料 Stress Control Buffer Layers Heterostructures Interlayers Silicon 缓冲器 排队空间 缓冲 Lamina Plies Couches Intermediaires Zwischenschichten Silicium Si Silizium Sudden Impulse Systeme International State Interaction Method Stieltje Imaging Spherical Interaction Approximation License Unknown External links Full record on ir.semi.ac.cn
