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Gold ion implantation into alumina using an "inverted ion source" configuration.

Authors
  • Salvadori, M C1
  • Teixeira, F S1
  • Sgubin, L G1
  • Araujo, W W R1
  • Spirin, R E1
  • Cattani, M1
  • Oks, E M2
  • Brown, I G3
  • 1 Institute of Physics, University of São Paulo, C.P. 66318, CEP 05315-970, São Paulo, S.P., Brazil. , (Brazil)
  • 2 High Current Electronics Institute, Russian Academy of Sciences, Tomsk 634055, Russia and National Research Tomsk Polytechnic University, Tomsk 634050, Russia.
  • 3 Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Type
Published Article
Journal
Review of Scientific Instruments
Publisher
American Institute of Physics
Publication Date
Feb 01, 2014
Volume
85
Issue
2
Identifiers
DOI: 10.1063/1.4824755
PMID: 24593599
Source
Medline
License
Unknown

Abstract

We describe an approach to ion implantation in which the plasma and its electronics are held at ground potential and the ion beam is injected into a space held at high negative potential, allowing considerable savings both economically and technologically. We used an "inverted ion implanter" of this kind to carry out implantation of gold into alumina, with Au ion energy 40 keV and dose (3-9) × 10(16) cm(-2). Resistivity was measured in situ as a function of dose and compared with predictions of a model based on percolation theory, in which electron transport in the composite is explained by conduction through a random resistor network formed by Au nanoparticles. Excellent agreement is found between the experimental results and the theory.

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