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Giant tunnel-electron injection in nitrogen-doped graphene

Authors
  • Lagoute, Jérôme
  • Joucken, Frédéric
  • Repain, Vincent
  • Tison, Yann
  • Chacon, Cyril
  • Bellec, Amandine
  • Girard, Yann
  • Sporken, Robert
  • Conrad, Edward H.
  • Ducastelle, Francois
  • Palsgaard, Mattias
  • Andersen, Nick Papior
  • Brandbyge, Mads
  • Rousset, Sylvie
Publication Date
Mar 31, 2015
Source
HAL-UPMC
Keywords
Language
English
License
Unknown
External links

Abstract

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000¯1) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

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