Affordable Access

deepdyve-link
Publisher Website

Gate-Tunable Spatial Modulation of Localized Plasmon Resonances.

Authors
  • Arcangeli, Andrea1
  • Rossella, Francesco1
  • Tomadin, Andrea1
  • Xu, Jihua1
  • Ercolani, Daniele1
  • Sorba, Lucia1
  • Beltram, Fabio1
  • Tredicucci, Alessandro1, 2
  • Polini, Marco3, 4
  • Roddaro, Stefano1
  • 1 NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR , Piazza san Silvestro 12, I-56127 Pisa, Italy. , (Italy)
  • 2 Dipartimento di Fisica, Università di Pisa , Largo Pontecorvo 3, I-56127 Pisa, Italy. , (Italy)
  • 3 Istituto Italiano di Tecnologia, Graphene Laboratories , Via Morego 30, I-16163 Genova, Italy. , (Italy)
  • 4 NEST, Scuola Normale Superiore , Piazza dei Cavalieri 7, I-56126 Pisa, Italy. , (Italy)
Type
Published Article
Journal
Nano Letters
Publisher
American Chemical Society
Publication Date
Sep 14, 2016
Volume
16
Issue
9
Pages
5688–5693
Identifiers
DOI: 10.1021/acs.nanolett.6b02351
PMID: 27479039
Source
Medline
Keywords
License
Unknown

Abstract

We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.

Report this publication

Statistics

Seen <100 times