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Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

Authors
  • Peng, N.
  • Zhang, Q.
  • Lee, Y. C.
  • Tan, O. K.
  • Marzari, N.
Publication Date
Jan 01, 2008
Source
Infoscience @ EPFL
Keywords
License
Unknown
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Abstract

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained. (C) 2008 Elsevier B.V. All rights reserved.

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