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GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

Authors
  • Low, Rui Shan1
  • Asubar, Joel T.1
  • Baratov, Ali1
  • Kamiya, Shunsuke1
  • Nagase, Itsuki1
  • Urano, Shun1
  • Kawabata, Shinsaku1
  • Tokuda, Hirokuni1
  • Kuzuhara, Masaaki2
  • Nakamura, Yusui3
  • Naito, Kenta3
  • Motoyama, Tomohiro3
  • Zenji Yatabe3
Type
Published Article
Journal
Applied Physics Express
Publisher
Japan Society of Applied Physics
Publication Date
Feb 17, 2021
Volume
14
Identifiers
DOI: 10.35848/1882-0786/abe19e
Source
MyScienceWork
License
Green

Abstract

We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance–voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3 in the development of high-performance GaN-based MIS-HEMTs.

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