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Gallium arsenide electroabsorption avalanche photodiode waveguide detectors.

Authors
  • Sun, M J
  • Nichols, K H
  • Chang, W S
  • Gregory, R O
  • Rosenbaum, F J
  • Wolfe, C M
Type
Published Article
Journal
Applied optics
Publication Date
May 15, 1978
Volume
17
Issue
10
Pages
1568–1578
Identifiers
DOI: 10.1364/AO.17.001568
PMID: 20198024
Source
Medline
License
Unknown

Abstract

Gallium arsenide electroabsorption avalanche photodiode (EAP) detectors have been fabricated in n - n(+) GaAs waveguides. Since these EAP detectors respond to wavelengths beyond the normal absorption edge of GaAs, due to the Franz-Keldysh effect, they have been used to detect the below band gap radiation from GaAs lasers and the 1.06-mum radiation from Nd:YAG lasers. The measured absorption and responsivity at these wavelengths suggest a number of applications. These EAP devices have been used to detect analog signals with a distortion less than 6%. Methods for utilizing them in time- and frequency-demultiplexing applications are also described.

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