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GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy

Authors
  • jf, he
  • wang, hl
  • shang, xj
  • mf, li
  • zhu, y
  • wang, lj
  • yu, y
  • hq, ni
  • yq, xu
  • niu, zc
Publication Date
Jan 01, 2011
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 x 10(3) cm(-2). The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7A cm(-2).

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