GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
- Authors
- Publication Date
- Jan 01, 2011
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
- License
- Unknown
- External links
Abstract
Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 x 10(3) cm(-2). The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7A cm(-2).
