Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2

Authors

• Mortelmans, Wouter; 112153;
• Mehta, Ankit Nalin; 94234;
• Balaji, Yashwanth; 110175;
• El Kazzi, Salim;
• Sergeant, Stefanie;
• Houssa, Michel; 31977;
• De Gendt, Stefan; 43564;
• Heyns, Marc; 11193;
• Merckling, Clement; 56975;

Publication Date

Apr 01, 2020

Source

Lirias

Keywords

• Science & Technology
• Technology
• Materials Science, Multidisciplinary
• Materials Science
• Molecular Beam Epitaxy
• Van Der Waals Epitaxy
• Transition Metal Dichalcogenides
• Wse2
• Homoepitaxy
• Hexagonal Boron-Nitride
• Metal Dichalcogenide
• Grain-Boundaries
• Epitaxy
• Monolayers
• Sapphire
• Dynamics
• Bilayer
• Domains
• Growth

License

Unknown

External links

• Full record on lirias.kuleuven.be