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Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process

Authors
Type
Conference
Journal
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials
Publisher
The Japan Society of Applied Physics
Publication Date
Sep 12, 2015
Identifiers
DOI: 10.7567/ssdm.2015.d-7-5
Source
MyScienceWork
License
Green

Abstract

On the basis of the spectroscopic measurements, we developed the photo-assisted electrochemical etching process for the formation of self-aligned pore arrays on n-GaN substrates. The illumination with photon energy below the bulk band gap plays an important role in the formation of straight and size-controlled pores.

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