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Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

Authors
  • fang), f jiang (jiang
  • li-e), cai le (cai
  • jiang-yong), jy zhang (zhang
  • bao-ping), bp zhang (zhang
Publication Date
Jan 01, 2010
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

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