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On-film formation of bi nanowires with extraordinary electron mobility.

Authors
  • Shim, Wooyoung
  • Ham, Jinhee
  • Lee, Kyoung-Il
  • Jeung, Won Young
  • Johnson, Mark
  • Lee, Wooyoung
Type
Published Article
Journal
Nano letters
Publication Date
Jan 01, 2009
Volume
9
Issue
1
Pages
18–22
Identifiers
DOI: 10.1021/nl8016829
PMID: 19032034
Source
Medline
License
Unknown

Abstract

A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm(2)/(V s) and a mean free path of 1.35 mum in a 120 nm Bi nanowire, were observed at room temperature.

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