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A solution for solid state detector and preamplifier protection, during HV application and removal transition periods

Authors
Journal
Nuclear Instruments and Methods
0029-554X
Publisher
Elsevier
Publication Date
Volume
130
Issue
1
Identifiers
DOI: 10.1016/0029-554x(75)90187-1

Abstract

Abstract Surface barrier detectors may be damaged, because of microplasma breakdown, in rapid application of bias voltage. The high performance FETs of very low noise preamplifiers may also be damaged by rapid changes of the bias voltage. The electronic device described below permits the gradual application and removal of the bias voltage, without any influence on the power supply specifications.

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