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Exciton relaxation in Ga1 − xInxAs/GaAs self-organized quantum dots

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
25
Identifiers
DOI: 10.1006/spmi.1998.0625
Disciplines
  • Physics

Abstract

Abstract The exciton dynamics in Ga 1 − x In x As/GaAs self-organized quantum dots grown on GaAs (111)B substrates are studied by the time-resolved photoluminescence (PL). We have found the intra-dot exciton relaxation by the reduction of the linewidth and peak energy and also by the energy-dependent PL rise time in the transient PL spectra. Compared with the energy relaxation in the reference quantum wells, we have confirmed that the exciton relaxation in three-dimensionally confined quantum dots is slower than in the quantum wells.

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