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Defects in magnetron-sputtered a-Gel− χNχ:H

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(96)00158-5
Keywords
  • Section 7. Defects

Abstract

Abstract Electron spin resonance (ESR) signals of a-Ge l− χ N χ :H films can be approximately decomposed into two components, suggesting that these two components arise from Ge dangling bonds in the Ge-rich and from N-rich phase-separated regions. Light-induced ESR signals are observed both at 77 K (≥ 0.29) and room temperature (≥ 0.32).

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