Affordable Access

Publisher Website

Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5− xBix)O3semiconductors

Authors
Journal
Materials Research Bulletin
0025-5408
Publisher
Elsevier
Publication Date
Volume
42
Issue
11
Identifiers
DOI: 10.1016/j.materresbull.2006.12.010
Keywords
  • A. Oxides
  • A. Semiconductors
  • C. Xafs (Exafs And Xanes)
  • D. Catalytic Properties
  • C. Electronic Structure
Disciplines
  • Chemistry
  • Engineering

Abstract

Abstract We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV–vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of Bi V substituent. As a result of band gap engineering, the Ba(In 0.5Ta 0.5− x Bi x )O 3 compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation ( λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like Bi V ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.

There are no comments yet on this publication. Be the first to share your thoughts.