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Deep center studies of nitrogen free and nitrogen doped VPE-GaAs0.35P0.65-led's

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-2313(81)90248-9

Abstract

Abstract GaAs 0.35P 0.65-p + n-diodes with and without nitrogen doping have been investigated with an extended room temperature photocapacitance technique to determine the trap energies, their densities and the related recombination coefficients. It is shown that in these diodes ammonia does not only lead to the desired nitrogen doping to enhance radiative recombination but also to an increase of competing nonradiative recombination traps which control the minority carrier lifetimes. This technique is particularily device oriented and can be applied to any p-n junction to determine relevant deep trap parameters.

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