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Fe-centers in GaN as candidates for spintronics applications

Authors
  • Malguth, E
  • Hoffmann, AV
  • Phillips, M
  • Gehlhoff, W
Publication Date
Nov 28, 2005
Source
UTS Institutional Repository
License
Unknown
External links

Abstract

The potential use of Fe doped GaN for spintronics applications requires a complete understanding of the electronic structure of Fe in all of its charge states. To address these issues, a set of 400 mu m thick freestanding HVPE grown GaN:Fe crystals with

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