Affordable Access

Publisher Website

Mechanisms of silicon monocrystalline growth from SiH4/H2at reduced pressures

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
61
Issue
2
Identifiers
DOI: 10.1016/0022-0248(83)90362-7

Abstract

Abstract The kinetics of monocrystalline Si deposition on slightly misoriented {111}Si substrates from SiH 4 diluted in H 2 at reduced pressures is theoretically analysed in terms of a condensation process of Si atoms and SiH 4 molecules, taking surface diffusion into account. The possibility of a homogeneous nucleation is considered by applying the classical homogeneous nucleation theory to published experimental results. A growth mechanism limited by diffusion of SiH 4 molecules on a surface inhibited by H adsorption is in agreement with the growth rates of monocrystalline Si observed at reduced pressures, when the heated substrate has a surface that is not too large. A condensation of SiH 4 molecules explains the homogeneous nucleation.

There are no comments yet on this publication. Be the first to share your thoughts.