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Resonant tunneling in GaAs/AlGaAs double quantum wells

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
267
Identifiers
DOI: 10.1016/0039-6028(92)91157-7
Disciplines
  • Economics
  • Physics

Abstract

Abstract Transport experiments on the resonant tunneling of electrons between the two two-dimensional electron gases in modulation-doped double quantum wells are discussed. These include the observation of narrow resonances in the tunneling conductance when an external gate field aligns the ground subband edges in the two quantum wells, the attainment of large “peak-to-background” ratios (> 150) for tunneling in asymmetric double well structures, the employment of resonant magneto-tunneling to probe the 2D Fermi surface, and preliminary results on inter-subband resonant tunneling.

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