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Development of second generation oxygen implanter

DOI: 10.1016/b978-0-444-89418-2.50051-5
  • Design


Abstract Separation by implantation of oxygen (SIMOX) is the most advanced technique for achieving silicon-on-insulator material. The buried oxide layer is formed through a very high dose oxygen implantation process. Until recently, the only available practical equipment for implantation was a research-oriented machine based on a five year old design. The maturation of the technology has necessitated the development of a true manufacturing implanter and Ibis Technology has undertaken such a design. It will have four times the throughput capability of the previous design, coupled with advanced controls and automation capabilities. The details of the new design, comparisons with the existing equipment, and preliminary results are reported.

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