Affordable Access

Publisher Website

A silicon microstrip gas chamber

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
348
Identifiers
DOI: 10.1016/0168-9002(94)90766-8

Abstract

Abstract We are manufacturing microstrip gas chambers (MSGC) on silicon with an insulating SiO 2 layer. To study the effect of the sheet resistance of the SiO 2 on the operation of the detector several processes to modify the SiO 2 layer have been investigated: ion implantation, boron and phosphorus diffusion, phosphosilicate glass evaporation and polycrystalline silicon deposition. The dependence of the gas gain on the potentials of the different electrodes and the long term stability have been studied.

There are no comments yet on this publication. Be the first to share your thoughts.