Affordable Access

Publisher Website

High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

Authors
Journal
Nanoscale Research Letters
1931-7573
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Volume
5
Issue
5
Identifiers
DOI: 10.1007/s11671-010-9575-4
Keywords
  • Nano Express
  • Material Science
  • Molecular Medicine
  • Engineering
  • General
  • Chemistry/Food Science
  • General
  • Physics
  • General
  • Materials Science
  • General
  • Nanotechnology
Disciplines
  • Design
  • Mathematics

Abstract

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

There are no comments yet on this publication. Be the first to share your thoughts.