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Facile Dry Surface Cleaning of Graphene by UV Treatment

Authors
  • Kim, Jin Hong1
  • Haidari, Mohd Musaib1
  • Choi, Jin Sik1
  • Kim, Hakseong2
  • Yu, Young-Jun3
  • Park, Jonghyurk4
  • 1 Konkuk University, Department of Physics, Seoul, 05029, Korea , Seoul (South Korea)
  • 2 Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea , Daejeon (South Korea)
  • 3 Chungnam National University, Department of Physics, Daejeon, 34134, Korea , Daejeon (South Korea)
  • 4 Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Korea , Daejeon (South Korea)
Type
Published Article
Journal
Journal of the Korean Physical Society
Publisher
Korean Physical Society
Publication Date
Apr 28, 2018
Volume
72
Issue
9
Pages
1045–1051
Identifiers
DOI: 10.3938/jkps.72.1045
Source
Springer Nature
Keywords
License
Yellow

Abstract

Graphene has been considered an ideal material for application in transparent lightweight wearable electronics due to its extraordinary mechanical, optical, and electrical properties originating from its ordered hexagonal carbon atomic lattice in a layer. Precise surface control is critical in maximizing its performance in electronic applications. Graphene grown by chemical vapor deposition is widely used but it produces polymeric residue following wet/chemical transfer process, which strongly affects its intrinsic electrical properties and limits the doping efficiency by adsorption. Here, we introduce a facile dry-cleaning method based on UV irradiation to eliminate the organic residues even after device fabrication. Through surface topography, Raman analysis, and electrical transport measurement characteristics, we confirm that the optimized UV treatment can recover the clean graphene surface and improve graphene-FET performance more effectively than thermal treatment. We propose our UV irradiation method as a systematically controllable and damage-free post process for application in large-area devices.

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