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Hydrothermal-method-grown ZnO single crystal as fast EUV scintillator for future lithography

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
311
Issue
3
Identifiers
DOI: 10.1016/j.jcrysgro.2008.09.106
Keywords
  • A2. Hydrothermal Crystal Growth
  • B1. Oxides
  • B2. Scintillator Materials
Disciplines
  • Earth Science
  • Geography
  • Physics

Abstract

Abstract The temperature dependence of scintillation properties of a hydrothermal-method-grown zinc oxide (ZnO) emission is investigated using a nickel-like silver laser emitting at 13.9 nm. A broad peak at 386 nm with a full-width at half-maximum (FWHM) of 15 nm at room temperature (298 K) is obtained. The peak position tends to be blue shifted while the FWHM becomes narrower when the crystal temperature is decreased to 25 K. Streak images fitted by a double exponential decay reveal that the measured emission decay at 105 K was τ 1=0.88 ns and τ 2=2.7 ns. This decay time of a few nanoseconds is suitable for lithographic applications and is sufficiently short for the characterization of laser plasma extreme ultraviolet (EUV) sources with nanosecond durations.

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