Affordable Access

Effect of FIB milling on MEMS SOI cantilevers

Authors
Publisher
IEEE
Publication Date
Keywords
  • Electrical Communication Engineering

Abstract

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

There are no comments yet on this publication. Be the first to share your thoughts.