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Influence of the indium oxide addition on low field magnetoresistance behavior in the La2/3Sr1/3MnO3granular composite thin films

Authors
Journal
Journal of Magnetism and Magnetic Materials
0304-8853
Publisher
Elsevier
Publication Date
Volume
239
Identifiers
DOI: 10.1016/s0304-8853(01)00605-9
Keywords
  • Low-Field Tunnel-Type Mr
  • Sol–Gel
  • Complex Impedance
  • Grain Boundary

Abstract

Abstract The La 2/3Sr 1/3MnO 3(LSMO)+In 2O 3 and LSMO+Al 2O 3 granular composite thin films have been prepared by a sol–gel spinning process. It is observed that low-field tunnel type magnetoresistance (MR) ratio of the LSMO+5 vol% In 2O 3 film (MR=0.70%) measured at 500 Oe was much higher than those of the films with 0 and 20 vol% In 2O 3 and 0–20 vol% Al 2O 3. In complex impedance analysis, we observe that the grain resistivity is independent of the annealing temperature, however, the grain boundary resistivity increases significantly as the annealing temperature increases. Therefore, the value of enhanced low-field MR of LSMO thin films with addition of In 2O 3 is caused by increase of defects inside thin films and the growing grain boundary’s insulation.

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