Affordable Access

Publisher Website

Electrical and Reliability Analysis for GDH High-k Films After Rapid Thermal Annealing

Elsevier Ltd
DOI: 10.1016/j.proeng.2011.12.492
  • High-K
  • Co-Sputtering
  • Hfo2
  • Gd2O3
  • Rta


Abstract The amorphous HfO2 doped Gd2O3 (GDH) film has been grown on p-type Si (001) substrates by radio frequency co-sputtering, and the thickness of GDH film was 4.4nm. The results of electrical tests showed that the ΔVFB of C-V curves reduced from 170mV to 40mV, dielectric constant increased from 19.6 to 21.3, and relaxation phenomena decreased after RTA. I-V curves showed that the leakage current density of GDH film was reduced from 9.6×10-4 A/cm2 to 1.3×10-5 A/cm2 after Rapid Thermal Annealing (RTA). The reliability studies on GDH gate dielectric show that the Time Zero Dielectric Breakdown (TZDB) was mainly caused by the accumulation of positive charges.

There are no comments yet on this publication. Be the first to share your thoughts.