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Silicon oxidation studied by in-situ tem

Authors
Journal
Ultramicroscopy
0304-3991
Publisher
Elsevier
Publication Date
Volume
31
Issue
1
Identifiers
DOI: 10.1016/0304-3991(89)90031-4

Abstract

Abstract Surface-sensitive bulk-forbidden Bragg reflections have been used to study the oxidation of silicon. Images reveal the appearance of atomic steps on clean silicon surfaces and after oxide growth. Diffraction patterns given quantitative estimates of buried interface roughness from plan-view samples. Diffracted beam intensities allow atomistic analysis of the O 2/ Si surface interaction during the initial stages of oxidation.

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