Affordable Access

Publisher Website

A novel reactor concept for multiwafer growth of III–V semiconductors

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0022-0248(98)01042-2
Keywords
  • Movpe
  • Multiwafer Growth
  • Led
  • Production
Disciplines
  • Design

Abstract

Abstract Since the invention of the Planetary Reactors ® a reliable tool for mass production of various III–V compounds has existed. These reactors have proven to grow extremely uniform films together with a highly efficient utilization of the precursors. Now a new generation of Planetary Reactors ® is introduced: the so-called G3 systems. Their main features are: an inductive heating system with extremely low thermal mass for precise and fast heating, high flexibility in the reactor size (15×2″, 35×2″ to 9×4″ wafers per load so far, further enlargement possible) and the option to use a fully automated cassette-to-cassette wafer loading system. The benefits of this new design are very short cycle times, extreme run-to-run stability and even further reduced cost of ownership. The performance of this reactor will be discussed in conjunction with the well established AIX 2400 reactor with a set up of 15×2″ or 5×4″ wafer. Uniformity of thickness, luminescence intensity and composition of the most important III–V compounds such as GaInP, GaInAsP and AlGaInP are shown.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Layer uniformity in a multiwafer MOVPE reactor for...

on Journal of Crystal Growth Jan 01, 1991

Novel precursors for the growth of III–V semicondu...

on Journal of Crystal Growth Jan 01, 1986

Modelling of growth in a 5 X 3 inch multiwafer met...

on Journal of Crystal Growth Jan 01, 1994

Growth of highly uniform, reproducible InGaAs film...

on Journal of Crystal Growth Jan 01, 1991
More articles like this..