Affordable Access

Publisher Website

Nonlinear optics near the metal insulator transition

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
60
Issue
8
Identifiers
DOI: 10.1016/0038-1098(86)90260-7

Abstract

Abstract Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X (3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.

There are no comments yet on this publication. Be the first to share your thoughts.