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Preparation and spectroscopic characterization of γ-Al2O3thin films

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
250
Identifiers
DOI: 10.1016/0039-6028(91)90709-2

Abstract

Abstract The electronic structure and surface properties of γ-Al 2O 3 thin films are studied. We have prepared the films by oxydizing Al foils under controlled conditions and we characterize the γ-Al 2O 3 samples by means of XPS, UPS, and TEM and found no charging. Pronounced effects in temperature-dependent changes of the work function are observed which result from changes in band bending and electron affinities by reorganisation and migration of defects. Thereby the ability of these systems for prototype studies in catalysis and analysis of defects is demonstrated.

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