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High electron mobility pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure on InP grown by flux-stabilized MBE

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
115
Identifiers
DOI: 10.1016/0022-0248(91)90795-7

Abstract

Abstract A very high electron mobility pseudomorphic Si-doped In 0.48Al 0.52As/ undoped In 0.8Ga 0.2As heterostructure is successfully grown on the InP substrate by the newly invented technology of stabilizing the transient vapor flux of group-III cells with SQRT control and inserting an InAs monolayer in the heterointerface between the channel layer and the spacer. The actual critical thickness of the pseudomorphic heterostructure as determined by the Hall measurement is found to follow the energy balance model, and the highest 2DEG mobilities over 1.6 and 16 m 2 /V·s with 1.6×10 12 cm -2 at 293 and 10 K, respectively, are obtained for the InP-based pseudomorphic In 0.52Al 0.48As/In 0.2Ga 0.2As heterostructure.

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